jiangsu changjiang electronics technology co., ltd sot-89 -3l plastic-encapsulate transistors 2SD1766 transistor (npn) features z low v ce(sat) .v ce(sat) =0.16v(typ.)(i c /i b =2a/0.2a) z complements to 2sb1188 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 32 v v ebo emitter-base voltage 5 v i c collector current -continuous 2 a p c collector dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c =50 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 32 v emitter-base breakdown voltage v (br)ebo i e =50 a, i c =0 5 v collector cut-off current i cbo v cb =20v, i e =0 1 a emitter cut-off current i ebo v eb =4v, i c =0 1 a dc current gain h fe(1) v ce =3v, i c =500ma 82 390 collector-emitter saturation voltage v ce(sat) i c =2a, i b =0.2a 0.8 v transition frequency f t v ce =5v, i c =50ma, f=100mhz 100 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 30 pf classification of h fe(1) rank p q r range 82-180 120-270 180-390 marking dbp dbq dbr sot-89 -3l 1. base 2. collector 3. emitter www.cj-elec.com 1 c , nov ,2015 b,jun,2012
10 100 10 100 1000 0.1 1 10 100 1000 0 200 400 600 800 1000 0 25 50 75 100 125 150 0 200 400 600 0.1 1 10 100 1000 1 10 100 1 10 100 1000 10 100 1000 0.1 1 10 1 10 100 1000 0.0 0.3 0.6 0.9 1.2 0.1 1 10 100 1000 012345 0 100 200 300 400 500 600 700 40 5 2000 i c f t ?? common emitter v ce =5v t a =25 collector current i c (ma) transition frequency f t (mhz) 2000 =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) 2000 2000 t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 300 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 3v 30 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) collector current i c (ma) base-emmiter voltage v be (v) v be ?? i c t a = 2 5 t a = 1 0 0 common emitter v ce =3v static characteristic common emitter t a =25 2.0ma 1.6ma 1.4ma 1.2ma 1.0ma 0.8ma 0.6ma 1.8ma 0.4ma i b =0.2ma collector current i c (ma) collector-emitter voltage v ce (v) typical characteristics www.cj-elec.com 2 c , nov ,2015 b,jun,2012
min m a x min m a x a 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e e1 l 0.900 1.200 0.035 0.047 symbol dimensions in millimeters dimensions in inches 1.550 ref. 0.061 ref. 1.500 typ. 0.060 typ. 3.000 typ. 0.118 typ. 6 2 7 / 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 / 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 3 c , nov ,2015
6 2 7 / 7 d s h d q g 5 h h o www.cj-elec.com 4 c , nov ,2015
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